Drive-level capacitance profiling of Cu(In,Ga)Se2 solar cells for different Cu/III ratios
- Resource Type
- Conference
- Authors
- Zapalac, Geordie; Demirkan, Korhan; Mackie, Neil
- Source
- 2014 IEEE 40th Photovoltaic Specialist Conference (PVSC) Photovoltaic Specialist Conference (PVSC), 2014 IEEE 40th. :0452-0455 Jun, 2014
- Subject
- Components, Circuits, Devices and Systems
Capacitance measurement
Voltage measurement
Impedance measurement
Temperature measurement
Frequency measurement
Inductance measurement
Phase measurement
carrier concentration
CIGS
deep level defects
drive-level capacitance profiling
- Language
- ISSN
- 0160-8371
We report on drive-level capacitance profiling (DLCP) measurements made on Cu(In,Ga)Se 2 solar cells. We observe that the deep level defect density and carrier concentration are correlated, with lower deep level defect densities and lower carrier concentrations associated with higher average Cu/III measured within the first half micron of the surface using Auger electron spectroscopy (AES).