Reliability improvement in amorphous InGaZnO thin film transistors passivated by photosensitive polysilsesquioxane passivation layer
- Resource Type
- Conference
- Authors
- Bermundo, Juan Paolo; Ishikawa, Yasuaki; Yamazaki, Haruka; Nonaka, Toshiaki; Uraoka, Yukiharu
- Source
- 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2014 21st International Workshop on. :145-147 Jul, 2014
- Subject
- Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Robotics and Control Systems
Passivation
Materials
Stress
Thin film transistors
NIST
Logic gates
Degradation
- Language
We report the fabrication of highly reliable amorphous InGaZnO (a-IGZO) passivated by a novel photosensitive polysilsesquioxane-based passivation layer using a simple solution process. Results show that the photosensitive passivation material is effective in improving the reliability of a-IGZO. a-IGZO thin film transistors (TFT) passivated by this photosensitive material exhibited a small threshold voltage (V th ) shift of ∼ 0.4 V during positive bias stress (PBS), ∼ −0.15 V during negative bias stress (NBS) and −2.3 V during negative bias illumination stress (NBIS). These results demonstrate the large potential of easy to fabricate photosensitive polysilsesquioxane passivation layers as effective passivation material.