Porous and RF sputtering InP for portable THz-TDS in pharmaceutical and medical applications
- Resource Type
- Conference
- Authors
- Sirbu, Lilian; Ghimpu, Lidia; Danila, Mihai; Muller, Raluca; Matei, Alina; Comanescu, Florin; Ionescu, Alina; Grigore, Oana; Dascalu, Traian; Sarua, Andrei
- Source
- CAS 2013 (International Semiconductor Conference) Semiconductor Conference (CAS), 2013 International. 1:69-72 Oct, 2013
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Indium phosphide
Films
Radio frequency
Laser beams
Sputtering
Antennas
- Language
- ISSN
- 1545-827X
2377-0678
We developed a technology for deposition of metal contacts/wires upon nanoporous InP thin film structures and RF sputtered InP films. Indium phosphide (InP) films were deposited onto glass substrate using RF magnetron sputtering by varying the substrate temperature (50–100°C), under constant argon pressure (6.3·10 −3 Bar) and RF power (40–100 W).