While high performance InGaN/GaN quantum well (QW) lasers have recently been demonstrated emitting in the shorter wavelengths of the visible spectrum (blue and green), longer (red-emitting) lasers have yet to be demonstrated in this material system. InGaN/GaN quantum dots (QDs) have important advantages over similar QWs in the context of laser performance including: stronger confinement and better electron/hole wavefunction overlap, smaller piezoelectric field and resulting quantum confined Stark effect (QCSE), and reduced recombination at dislocations due to spatial confinement of carriers [1,2]. We have recently demonstrated the first InGaN/GaN QD visible laser [3] with an emission wavelength in the green range (524 nm). The broad area laser was characterized by Jth=1.2 kA/cm 2 and a QCSE-induced peak shift of only 5nm in the emission peak from spontaneous emission to the peak of the lasing spectrum. Additionally, these nitride based lasers have excellent temperature stability, compared with other material systems emitting at long visible wavelengths[4]. We have measured T 0 =233 K in these green emitting devices. We have also recently demonstrated lasers emitting at various other visible wavelengths, including in the blue (420 nm) [5]. Here we demonstrate, for the first time, a red-emitting (λ=635 nm) laser in the nitride system using InGaN/GaN QDs.