Composition measurement of tri-layer SiGe stack using broadband spectroscopic ellipsometry
- Resource Type
- Conference
- Authors
- Haensel, Leander; Ygartua, Carlos; Shu, Frank; Haupt, Ronny; Anderson, Michael; Birk, Felipe Tijiwa; Vaid, Alok
- Source
- ASMC 2013 SEMI Advanced Semiconductor Manufacturing Conference Advanced Semiconductor Manufacturing Conference (ASMC), 2013 24th Annual SEMI. :231-236 May, 2013
- Subject
- Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Semiconductor device modeling
Silicon germanium
Silicon
Correlation
X-ray scattering
Metrology
Germanium
Composition; SiGe; multi
layer
stack
spectroscopic ellipsometry
BBSE
metrology
- Language
- ISSN
- 1078-8743
2376-6697
This paper discusses the development and implementation of a Broadband Spectroscopic Ellipsometry (BBSE) composition measurement to characterize a tri-layer stack consisting of 2 SiGe layers of different Germanium concentrations topped by an epitaxial Si layer. The designed experiment wafer set and the composition model development based on AES and XRD reference data are discussed. The spectral sensitivity of the composition model and the correlation to reference metrology are shown. Wafer to wafer and within wafer variation, stability and tool to tool matching performance are quantified based on the implementation of the composition model as an inline measurement for a 20nm development vehicle. The paper arrives at the conclusion that BBSE is a feasible high throughput metrology option for this application, while leaving room for improvement in future revisions of the model.