Analysis and design of a fully integrated, linear dual band LNA for WLAN and Wi-MAX application
- Resource Type
- Conference
- Authors
- Bhattacharya, Ritabrata; Gupta, Robin; Basu, Ananjan; Koul, Shiban. K.
- Source
- 2012 Asia Pacific Microwave Conference Proceedings Microwave Conference Proceedings (APMC), 2012 Asia-Pacific. :759-761 Dec, 2012
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Dual band
Impedance matching
Capacitance
CMOS integrated circuits
Switches
Capacitors
Linearity
Cascode amplifier
CMOS RF
Dual Band
Low Noise Amplifier
Low Power
- Language
- ISSN
- 2165-4727
2165-4743
This work reports development of a fully integrated dual band low noise amplifier(LNA) in 0.18 μm CMOS at 2.8/3.4GHz for WLAN and Wi-MAX applications. Dual-band operation is achieved by switching one capacitor each in input and output matching networks. Measured results show a gain of 5 dB/7 dB at 2.8GHz/3.4GHz. Key features of the LNA are: high IIP3 > +1.5dBm (in both bands) while consuming 5.7mA from a 1.8V supply, a single control input and active area of 0.16mm 2 . An analytical expression for voltage gain has also been derived and verified in both bands.