Strain accommodation within porous buffer layers in heteroepitaxial growth
- Resource Type
- Conference
- Authors
- Grym, J.; Nohavica, D.; Gladkov, P.; Vanis, J.; Hulicius, E.; Pangrac, J.; Pacherova, O.; Piksova, K.
- Source
- The Ninth International Conference on Advanced Semiconductor Devices and Mircosystems Advanced Semiconductor Devices & Microsystems (ASDAM), 2012 Ninth International Conference on. :235-238 Nov, 2012
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Substrates
Gallium arsenide
Surface morphology
Epitaxial growth
Surface treatment
Epitaxial layers
Scanning electron microscopy
- Language
We report on the electrochemical preparation of GaAs porous substrates, their heat treatment in As rich environment and their overgrowth by metalorganic vapor phase epitaxy (MOVPE). The goal is to demonstrate that porous substrates are capable of accommodating strain at the interface with highly lattice mismatched In(x)Ga(1−x)As layers.