Comparative study of high voltage IGBTs with enhanced conductivity modulation
- Resource Type
- Conference
- Authors
- Padmanabhan, Karthik; Shea, Patrick M.; Shen, Z. John
- Source
- 2012 Proceedings of IEEE Southeastcon Southeastcon, 2012 Proceedings of IEEE. :1-6 Mar, 2012
- Subject
- Communication, Networking and Broadcast Technologies
Computing and Processing
Plugs
Insulated gate bipolar transistors
Junctions
Integrated circuit modeling
Doping
Semiconductor process modeling
Resistance
Insulated Gate Bipolar Transistor (IGBT)
Collector-Emitter Saturation Voltage
P+ Plug
Hole Barrier
Conduction Losses
Short Circuit Ruggedness
- Language
- ISSN
- 1091-0050
1558-058X
A new device structure for enhancing conductivity modulation in the Insulated Gate Bipolar Transistor (IGBT) is numerically studied. An N-type hole barrier layer and a deep P+ plug emitter tie are added to the conventional IGBT structure. It is observed that the addition of the P+ plug alone results in a reduction in switching power losses and no change in V CE (sat), however the avalanche breakdown voltage (BV) and short circuit ruggedness of the device are improved. A further 0.4 V improvement in V CE (sat) is observed when the P+ plug is implemented in conjunction with an N hole barrier. This is accomplished without the usual degradation of BV and ruggedness normally associated with other N hole barrier structures. The design space of the new IGBT structure is thoroughly characterized using 2-D TCAD simulation.