Comparison of charge pumping and 1/ƒ noise in irradiated Ge pMOSFETs
- Resource Type
- Conference
- Authors
- Francis, S. Ashley; Zhang, Cher Xuan; Zhang, En Xia; Fleetwood, Daniel M.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Simoen, Eddy; Mitard, Jerome; Claeys, Cor
- Source
- 2011 12th European Conference on Radiation and Its Effects on Components and Systems Radiation and Its Effects on Components and Systems (RADECS), 2011 12th European Conference on. :24-27 Sep, 2011
- Subject
- Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Radiation effects
Noise
MOSFETs
Annealing
Charge pumps
Logic gates
Hafnium compounds
Charge pumping
1/ƒ noise
border traps
interface traps
total ionizing dose
- Language
- ISSN
- 0379-6566
Irradiated Ge pMOSFETs have been characterized via charge pumping (I CP ) and 1/ƒ-noise. The noise increases much more with irradiation than I CP , showing that bulk oxide traps affect the noise more than interface traps.