A simulation for studying the process of plasma enhanced chemical vapor deposition (PECVD) technology, which is a key process in through-silicon-via (TSV) technology, is proposed in this paper. Elementary models (including ions and neutral particles direct incidence, re-emission and so on) corresponding to the mechanism of PECVD are included, which contributes to the morphology of Si0 2 film deposition. By selecting proper parameters of models such as flux of particles and sticking coefficient (Sc), the effect of different particles on deposition and the step-coverage effect of trenches with different aspect ratios are studied.