Effects of halo doping and Si capping layer thickness on total-dose effects in Ge p-MOSFETs
- Resource Type
- Conference
- Authors
- Arora, Rajan; Mitard, Jerome; Madan, Anuj; Simoen, Eddy; Zhang, Enxia X.; Fleetwood, Daniel M.; Choi, Bo K.; Schrimpf, Ronald D.; Galloway, Kenneth F.; Kulkarni, Shrinivas R.; Meuris, Marc; Claeys, Cor; Cressler, John D.
- Source
- 2009 European Conference on Radiation and Its Effects on Components and Systems Radiation and Its Effects on Components and Systems (RADECS), 2009 European Conference on. :275-281 Sep, 2009
- Subject
- Nuclear Engineering
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Silicon
Doping
Leakage current
Junctions
Logic gates
MOSFET circuits
Substrates
germanium
MOSFET
p+-n
diode
x-ray
- Language
- ISSN
- 0379-6566
The total-dose response of Gep-MOSFETs and p + -n junction diodes fabricated with process variations is reported. Radiation-induced reduction of the on/off current ratio increases with halo-doping density. Increasing the number of Si monolayers at the substrate/dielectric interface reduces total-dose sensitivity for p-MOSFETs. Reduced mobility degradation is observed after irradiation for devices with a higher number of Si monolayers. The radiation-induced increase in junction leakage is related to the increasing perimeter component of the leakage current. MOSFETs with a higher number of Si monolayers at the dielectric/substrate interface also have reduced perimeter leakage current. Diode leakage current increases with increasing halo-doping density.