Differential carrier lifetimes and efficiency of InGaN/GaN quantum well and quantum dot light emitting diodes
- Resource Type
- Conference
- Authors
- Banerjee, Animesh; Zhang, Meng; Bhattacharya, Pallab
- Source
- CLEO: 2011 - Laser Science to Photonic Applications Lasers and Electro-Optics (CLEO), 2011 Conference on. :1-2 May, 2011
- Subject
- Photonics and Electrooptics
Temperature measurement
Light emitting diodes
Gallium nitride
Quantum well devices
Temperature dependence
Radiative recombination
Plasma temperature
- Language
- ISSN
- 2160-8989
Temperature-dependent efficiency and differential carrier lifetimes have been measured on InGaN/GaN quantum well and quantum dot LEDs. The roles of Auger recombination and carrier leakage in LED efficiency roll-off are elucidated.