Green light emitting diodes with high internal quantum efficiency InGaN/GaN self-organized quantum dots grown by RF-Plasma Assisted Molecular Beam Epitaxy
- Resource Type
- Conference
- Authors
- Zhang, Meng; Guo, Wei; Banerjee, Animesh; Bhattacharya, Pallab
- Source
- CLEO/QELS: 2010 Laser Science to Photonic Applications Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010 Conference on. :1-2 May, 2010
- Subject
- Components, Circuits, Devices and Systems
Photonics and Electrooptics
Communication, Networking and Broadcast Technologies
Fields, Waves and Electromagnetics
Signal Processing and Analysis
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Quantum dots
Light emitting diodes
Gallium nitride
Molecular beam epitaxial growth
Quantum computing
Photoluminescence
Substrates
Temperature dependence
Electrons
Atomic force microscopy
- Language
Self-Organized green InGaN/GaN quantum dots with high internal quantum efficiency have been grown by RF-Plasma Assisted Molecular Beam Epitaxy. Green light emitting diodes based on these dots were fabricated and electroluminescence spectra were measured.