A novel fatigue-insensitive self-referenced scheme for 1T1C FRAM
- Resource Type
- Conference
- Source
- 2010 IEEE International Memory Workshop Memory Workshop (IMW), 2010 IEEE International. :1-2 May, 2010
- Subject
Components, Circuits, Devices and Systems Engineered Materials, Dielectrics and Plasmas Fields, Waves and Electromagnetics Random access memory Ferroelectric films Nonvolatile memory Voltage Circuits Fatigue Signal design Energy consumption Inverters Timing - Language
- ISSN
- 2159-483X
2159-4864