The smallest semiconductor spintronic devices possible for logic or memory will likely involve individual control of single spins while leaving nearby spins unaffected[1]. Readout of the stored state, or the result of a logic operation, would then be done by single-spin readout. Use of electric fields to control individual spins through the spin-orbit interaction is an attractive, scalable alternative to attempting to confine oscillating magnetic fields. Previous work on spins in quantum dots in a static magnetic field has shown that a single vertical electrical gate can be used to fully control the spin orientation[2]. For electron spins in InAs/GaAs quantum dots the spin reorientation times are predicted to be 6 ns for a 1 Tesla static magnetic field, and 0.6 ns for a 10 Tesla static magnetic field. The same geometry, when applied to a the single electron spin bound to a silicon donor in GaAs, yields spin reorientation times of 30 ns for a 4 Tesla magnetic field. More rapid spin manipulation in much smaller magnetic fields would be highly desirable. The substitutional Mn acceptor in GaAs has a large orbital moment, and thus is especially attractive for electrically-driven spin reorientation through the spin-orbit interaction. A geometry with two perpendicular electric fields has been predicted to yield potential spin manipulation frequencies in excess of 10 GHz[3] for electric fields in excess of 20 kV/cm, however the two perpendicular fields required complicates the device geometry.