Obvious suppression of performance degradation induced by thermal effect in SOI power LDMOSFETs using accumulation mode device structure
- Resource Type
- Conference
- Authors
- Cheng, Weitao; Teramoto, Akinobu; Ohmi, Tadahiro
- Source
- 2009 13th European Conference on Power Electronics and Applications Power Electronics and Applications, 2009. EPE '09. 13th European Conference on. :1-8 Sep, 2009
- Subject
- Power, Energy and Industry Applications
Robotics and Control Systems
Computing and Processing
Signal Processing and Analysis
Thermal degradation
Plasma temperature
MOSFET circuits
Oxidation
Cleaning
Silicon on insulator technology
Large scale integration
Microwave devices
Plasma density
Plasma devices
Self-heating
High temperature
LDMOSFET
Accumulation mode
bulk current
silicon-on-insulator
- Language
In this paper, we demonstrate that the advantages of obvious improvement o f the mobility and current drivability at high temperatures and the greatly suppressed self-heating effects in accumulation mode SOI power LDMOSFETs. We reveal the mechanisms of these advantages are resulted from the bulk current and accumulation mode device structure and propose that the accumulation mode device structure is very useful to realize high performance SOI power LDMOSFETs.