Short Channel Characteristics of Gallium–Indium–Zinc–Oxide Thin Film Transistors for Three-Dimensional Stacking Memory
- Resource Type
- Periodical
- Authors
- Song, I.; Kim, S.; Yin, H.; Kim, C. J.; Park, J.; Choi, H. S.; Lee, E.; Park, Y.
- Source
- IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 29(6):549-552 Jun, 2008
- Subject
- Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Thin film transistors
Stacking
Plasma temperature
Radio frequency
Sputtering
Threshold voltage
Manufacturing
Nonhomogeneous media
Circuits
Electrodes
Gallium–Indium–Zinc–Oxide (GIZO)
thin film transistor (TFT)
three-dimensional (3-D) stacking memory
- Language
- ISSN
- 0741-3106
1558-0563
Amorphous Gallium–Indium–Zinc–Oxide (GIZO) thin film transistors with short channels of 50 nm were successfully fabricated by e-beam lithographic patterning. The GIZO thin film transistors showed a high mobility of 8.2 $\hbox{cm}^{2}/\hbox{V}\cdot \hbox{s}$ with on-to-off current ratios up to $\hbox{10}^{6}$. Excellent short channel characteristics were also obtained with a small shift of the threshold voltages and no degradation of subthreshold slopes as $V_{\rm DS}$ increased, even with short channel lengths of less than 100 nm. These promising results indicate that the GIZO thin film transistors could be a candidate for selection transistors in 3-D cross point stacking memory.