Nano-pore arrays of anodic aluminum oxide fabricated using a Cr mask
- Resource Type
- Conference
- Authors
- Jeong, G. H.; Lim, S. K.; Park, J. K.; Lee, D.; Lee, B. K.; Suh, S. J.
- Source
- 2007 Digest of papers Microprocesses and Nanotechnology Microprocesses and Nanotechnology, 2007 Digest of papers. :192-193 Nov, 2007
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Aluminum oxide
Chromium
Magnetic materials
Magnetic devices
Optoelectronic devices
Magnetic films
Sun
Sputtering
Electron beams
Lithography
- Language
Nano-pore array of AAO were not formed in Cr and SiO 2 mask patterned area while these arrays were formed in the unpatterned areas. These arrays arranged along the line edge of Cr mask pattern, as shown in Fig. 2. It was considered that current density increased at edge of Cr pattern due to the formation of Al 2 O 3 at unpatterned Al surface by anodizing. Fig. 3 shows SEM image of AAO anodized under anodizing voltage of 5V and 8V. Nano-pores were formed in both patterned and unpatterned areas at relatively high voltage. Fig. 4 shows that the variation of nano-pore arrays with the size of exposed Al surface and edge effect decreased.