Correlation of electron density changes with optical frequency shifts in optically injected semiconductor lasers
- Resource Type
- Periodical
- Authors
- Al-Hosiny, N.M.; Henning, I.D.; Adams, M.J.
- Source
- IEEE Journal of Quantum Electronics IEEE J. Quantum Electron. Quantum Electronics, IEEE Journal of. 42(6):570-580 Jun, 2006
- Subject
- Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Electron optics
Laser transitions
Semiconductor lasers
Laser theory
Bandwidth
Injection-locked oscillators
Stability
Resonance
Resonant frequency
Charge carrier density
Cavity resonance shift
charge carrier density
injection locking
optical injection
semiconductor lasers
- Language
- ISSN
- 0018-9197
1558-1713
We have studied experimentally and theoretically the dynamics of electron density in a semiconductor laser subject to a wide range of optical injection strength. Within the locking bandwidth, three-dimensional injection locking stability maps were generated to present a complete picture of locking. Beyond the locking range, resonance frequency shifts were observed and systematically investigated. This phenomenon was successfully correlated with the variation of carrier density and theoretically verified.