A novel short-gate carbon nanotube thin film transistors
- Resource Type
- Conference
- Authors
- Jeng-Hua Wei; Hung-Hsiang Wang; Hsin-Hui Chen; Ming-Jiunn Lai; Ming-Jer Kao; Ming-Jinn Tsai
- Source
- 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672) VLSI technology, systems and applications VLSI Technology, Systems, and Applications, 2003 International Symposium on. :42-45 2003
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Computing and Processing
Signal Processing and Analysis
Carbon nanotubes
Voltage
Silicon
Insulation
Electrons
Intrusion detection
FETs
Charge carrier processes
Temperature
Protection
- Language
- ISSN
- 1524-766X
In this paper, a novel short-gate CNTFET with top-gate structure is fabricated. The traditional top-gate CNTFET shows the ambipolar behaviour while the novel CNTFET shows only the p-type FET characteristics for the same process parameters. The transport model and related band diagram are proposed to explain these differences.