Room Temperature Nanophononics from 1 GHz – 110 GHz with Composite Piezoelectric Transducer HBARs
- Resource Type
- Conference
- Authors
- Gokhale, Vikrant J.; Roussos, Jason A.; Hardy, Matthew T.; Katzer, D. Scott; Downey, Brian P.
- Source
- 2024 IEEE 37th International Conference on Micro Electro Mechanical Systems (MEMS) Micro Electro Mechanical Systems (MEMS), 2024 IEEE 37th International Conference on. :1087-1090 Jan, 2024
- Subject
- Bioengineering
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Micromechanical devices
Q-factor
Spectroscopy
Temperature distribution
Piezoelectric transducers
Acoustics
Resonators
High overtone bulk acoustic resonators
acoustic phonons
epitaxial thin films
piezoelectric transducers
scandium aluminum nitride
phonon spectroscopy
- Language
- ISSN
- 2160-1968
This paper presents epitaxially grown high overtone bulk acoustic resonators (epi-HBARs) demonstrating a dense spectrum of acoustic/phononic cavity overtone modes in an unprecedented range from 1 GHz to 110 GHz in a single device at room temperature. A critical element is the use of the composite structure of the ScAlN/AlN piezoelectric transducer to enable preferential transduction of higher order envelope modes. The strongest modes presented in this work lie in the 35 GHz – 50 GHz envelope, with Bode quality factor (Q Bode ) as high as 1000 (f × Q > 4×10 13 Hz). This extreme embodiment of a multi-mode MEMS resonator can be developed into a platform for phonon spectroscopy and coupled-physics experiments.