A 4.5 dBm SiGe Doubler-Amplifier Chain Covering the Entire D-Band
- Resource Type
- Conference
- Authors
- Mock, Matthias; Aksoyak, IIbrahim Kaggan; Ulusoy, Ahmet Cagri
- Source
- 2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2024 IEEE 24th Topical Meeting on. :29-32 Jan, 2024
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
General Topics for Engineers
Photonics and Electrooptics
Radio frequency
Power amplifiers
Silicon
Power generation
Wideband
Silicon germanium
Ultra wideband technology
SiGe
wideband
frequency doubler
amplifier
millimeter-wave
signal generation
D-band
- Language
- ISSN
- 2474-9761
We present an ultra-wideband doubler-amplifier chain with an output power 3-dB bandwidth of 110–186 GHz (46.2 %), covering the entire D-band frequencies (110–170 GHz). The chain consists of a push-push frequency doubler with a following buffer amplifier and is fabricated in a 130-nm SiGe BiCMOS technology, occupying a core area of only $0.11 \mathrm{~mm}^{2}$. The circuit demonstrates a peak output power of 4.5 dBm at 140 GHz, while doubler and amplifier consume 86 mW in total.