Millimeter-Wave AlGaN/GaN HEMTs on Si Operated at 12V and its modeling for 5G Handset Applications
- Resource Type
- Conference
- Authors
- Wei, Zhen-Tao; Liu, Dong-Sheng; Huang, Wei; Zhang, David Wei; Li, Liang; Ma, Hong-Ping
- Source
- 2023 Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC) Cross Strait Radio Science and Wireless Technology Conference (CSRSWTC), 2023. :1-3 Nov, 2023
- Subject
- Computing and Processing
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Radio frequency
Logic gates
HEMTs
Telephone sets
Silicon
Wide band gap semiconductors
Aluminum gallium nitride
AlGaN/GaN
HEMT
high-resistive silicon substrate
5G RF handset
- Language
- ISSN
- 2377-8512
In this paper, a RF AlGaN/GaN high electron mobility transistor (HEMT) based on low voltage application of 5G RF handset, firstly fabricated on high-resistive silicon substrate is introduced, which uses Ni/Au as T-shaped gate structure and double-layer silicide as surface medium. The maximum output current density of the device is 1.07 A/mm at V ds = 12 V and V gs = 2 V. f T = 27.8 GHz and BV (the breakdown voltage) = 35 V/µm are obtained for the 180-nm gate-length device with 1-µm source-to-gate spacing.