For the first time, we demonstrate excellent non-local CVD growth of p-type monolayer WSe 2 at reduced temperatures with BEOL compatibility, which is enabled by using stable mass flux of WO 2 Cl 2 precursor to increase the reaction rate during the monolayer WSe 2 growth at low temperature. High-quality monolayer WSe 2 can be grown at temperatures as low as 450 ℃ with film quality comparable to those by common growth methods at high temperatures with molten salt assistance. Based on this non-local growth method directly on SiO 2 , transfer-free high-performance monolayer WSe 2 p-FETs have been demonstrated with mobility of 57 cm 2 /Vs grown at 550 ℃ and 45 cm 2 /Vs grown at 450 ℃, 10 times higher than previous work at similar temperatures. The monolayer WSe 2 p-FET on 5 nm SiO 2 exhibits a record high transconductance of 190 μS/μm and on-state current of 350 μA/μm at V ds = -1 V, much higher than previous 2D TMDC transistors based on similar growth temperature. This work demonstrates high-performance monolayer WSe 2 pFETs based on BEOL compatible growth and fabrication without transfer, providing a new pathway for 2D TMDC CMOS circuit with integration capability.