2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Bioengineering Communication, Networking and Broadcast Technologies Components, Circuits, Devices and Systems Computing and Processing Engineered Materials, Dielectrics and Plasmas Fields, Waves and Electromagnetics Nuclear Engineering Photonics and Electrooptics Power, Energy and Industry Applications Robotics and Control Systems Signal Processing and Analysis Performance evaluation Fabrication Field effect transistors Charge carrier density Metals Logic gates Transition metal dichalcogenides
Two-dimensional (2D) transition metal dichalcogenide (TMD) materials are regarded as promising channel candidates for extreme contacted gate pitch (CGP) scaling. However, basic demonstration of the modules required to build logic devices is limited. For the first time, we demonstrate comparable n-type and p-type high-performance on 2D transistors. Translation to 300 mm wafer processing is tested by die-by-die transfer of the 2D material. The 300 mm fabrication preserves a relatively high mobility of 30 cm 2 /V•s. We demonstrate scaling of nMOS contact length (L C ) to 12 nm and top gate length (L G ) to 10 nm. Devices maintain high current density at short L C as well as in top-gate only operation.