3D Monolithically Integrated Device of Si CMOS Logic, IGZO DRAM-like, and 2D MoS2 Phototransistor for Smart Image Sensing
- Resource Type
- Conference
- Authors
- Lee, F.M.; Tseng, P. H.; Lin, Y. Y.; Lin, Y. H.; Weng, W. L.; Lin, N. C.; Sung, P. J.; Yang, C. C.; Wu, W. F.; Shen, C. H.; Chen, P. H.; Lee, Y. H.; Lee, M. H.; Wang, K. C.; Lu, C. Y.
- Source
- 2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
- Subject
- Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Image sensors
Three-dimensional displays
FinFETs
Silicon
Sulfur
Molybdenum
Phototransistors
- Language
- ISSN
- 2156-017X
We proposed a three-tier monolithic 3D (M3D) integration technology and constructed a unique platform to enable smart image sensor on an 8" Si wafer. In this platform, the 1 st tier’s laser-annealed 20nm Si FinFETs successfully demonstrated logic inverter, NAND and NOR functions. The 2 nd tier’s IGZO DRAM-like devices provided long data retention (>1000s) and robust non-destructive high current read. It is capable to serve as low-power working memory and MAC accelerator for computing-in-memory functions when configured in AND-type array. The top layer is a 5x5 array of MoS 2 TMD phototransistors with ultrahigh responsivity (>10 3 A/W) and tunable photogain (10°~10 4 ) for image sensing. All the functional units were fabricated by low-thermal budget processes and were connected by fine- pitch vertical interconnects for parallel signal processing.