In this paper, ANSYS was used to perform a hybrid bonding thermodynamic simulation of Micro-LED fabricated based on flip-chip bonding.We simulated the effects of different ILDs (interlayer dielectrics) and different diameters of In bumps on the mean stress of the bonding surface. The results show that filling BCB (Benzo cyclobutene)/PI (Polyimide)/SiO 2 can significantly reduce the mean stress on the In bumps bonding area, among which, filling BCB/PI is better than filling SiO 2 . And when the diameter of the In bumps is 5 μm, the mean stress on the In bumps bonding area is lowest. For the mean stress on the bonding area of the ILDs, filling BCB/PI is also much better than filling SiO 2 . Changing the diameter of the In bumps has little effect on the mean stress of the ILDs bonding area filled with BCB/PI. As for the bonding area of the ILDs filled with SiO 2 , the mean stress increases as the diameter of the In bumps increases. This paper uses simulation experiments to study the mean stress on different bonding areas during the hybrid bonding process of preparing Micro-LED, which provides a theoretical basis for improving the bonding strength and yield of Micro-LED, and provides ideas for realizing the industrialization of Micro- LED.