The temperature performances of SiC Trench MOSFET (TMOS) with integrated side-wall Schottky barrier diode (SWITCH-MOS) and heterojunction diode (HJ-TMOS) are compared for the first time in this paper. Both devices have the same structure, except that the SBD or P + PolySi/n-SiC heterojunction diode is formed on the side wall of the trench, respectively. The breakdown voltage for the HJ-TMOS is 1943 V at 300 K and 1989 V at 450 K, which is increased by 19.8% and 44.1% compared with those of SWITCH-MOS (BV 300K = 1623 V, BV 450K = 1379 V), due to that high temperature severely increases the leakage current of SWITCH-MOS. However, leakage current of HJ-TMOS is barely affected by temperature. Specifically, the leakage current of HJ-TMOS at 300 K and 450 K are almost equal to 0.067 μA/cm 2 at 1200 V, which is reduced by 79.1% and 99.8% compared with those of SWITCH-MOS (J DS,300K = 0.32 μA/cm2, J DS,450K = 41.7 μA/cm 2 ). The reverse conduction voltage drop for the HJ-TMOS is 1.92 V (@300 K) and 2.09 V (450 K), which are increased by 45.5% and 15.5% compared with those of SWITCH-MOS (V R_on,SBD =1.32 V at 300K, V R_on,SBD = 1.81 V at 450K), due to higher barrier height. The total switching loss of the HJ-TMOS are reduced by ~ 8% compared with those of SWITCH-MOSand are barely affected by temperature.