Zn2SnO4 Films for Use as Transparent Conductive Layers of Electronic Devices
- Resource Type
- Conference
- Authors
- Yermakov, Maksym; Pshenychnyi, Roman; Opanasyuk, Anatoliy; Klymov, Oleksii
- Source
- 2023 IEEE International Conference on Information and Telecommunication Technologies and Radio Electronics (UkrMiCo) Information and Telecommunication Technologies and Radio Electronics (UkrMiCo), 2023 IEEE International Conference on. :317-321 Nov, 2023
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Nanoparticles
Scanning electron microscopy
Annealing
Films
Indium tin oxide
Lattices
X-ray diffraction
zinc stannate
morphology
structural characteristics
resource efficiency
Raman spectra
- Language
In the work, Zn 2 SnO 4 films were obtained by sputtering nanoinks based on a suspension of nanoparticles. After application, the layers were annealed in an argon atmosphere. The results of diffractometric studies indicate the presence in the films of only the zinc orthostanate phase with the inverse spinel structure, confirmed by Raman spectroscopy. The investigated films can be used as a cheap analog of ITO for creating transparent conductive layers of electronic devices.