Multilevel Analog Modulation Based on Low Dimensional Optoelectronic Device Integration
- Resource Type
- Conference
- Authors
- Li, Zhexin; Lou, Zheng; Wang, Lili
- Source
- 2023 IEEE International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO) Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), 2023 IEEE International Conference on. :1-4 Jul, 2023
- Subject
- Aerospace
Bioengineering
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Integrated optics
Voltage measurement
II-VI semiconductor materials
Optical variables measurement
Logic gates
Optical detectors
Photodetectors
Multilevel modulation
Dual-gate transistor
Nanowire photodetector
Optoelectronic integration
- Language
- ISSN
- 2694-510X
The multilevel analog modulation unit is integrated by a dual-gate Indium Gallium Zinc Oxide transistor and Cadmium Selenide nanowire photodetector (1T1P). The transistor with dual-gate has reconfigurable transfer characteristic and resolved current output under different voltage application on dual gate, the nanowire photodetector has significantly favorable $5.55 \times 10^{15}$ Jones of specific detectivity and 5585.42 A/W of responsivity. The multilevel output in single integrated unit can be modulated in septenary by optical excitation that a detector is series with the top gate of transistor. The back gate of transistor also modulated quinary output under constant optical excitation.