Stabilizing a SiGe BiCMOS Transmitter on a Molecular Absorption Line
- Resource Type
- Conference
- Authors
- Gluck, Alexandra; Rothbart, Nick; Hubers, Heinz-Wilhelm
- Source
- 2023 48th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 2023 48th International Conference on. :1-2 Sep, 2023
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Time-frequency analysis
Transmitters
Absorption
Receivers
BiCMOS integrated circuits
Carbon monoxide
Silicon germanium
- Language
- ISSN
- 2162-2035
In many applications, highly stable frequency references are desired which at the same time take up little volume and consume little power. Transmitters and receivers in SiGe BiCMOS technology can be realized on chip-scale, working at in the THz/Millimeter-wave range where many molecules have strong rotational transitions. We stabilized a SiGe BiCMOS transmitter on a rotational transition of carbon monoxide, reaching stabilities of $\lt 10^{-10}$ at 100 s integration.