A 700 GHz Integrated Signal Source Based on 130 nm InP HBT Technology
- Resource Type
- Periodical
- Authors
- Son, H.; Yoo, J.; Kim, D.; Rieh, J.
- Source
- IEEE Transactions on Terahertz Science and Technology IEEE Trans. THz Sci. Technol. Terahertz Science and Technology, IEEE Transactions on. 13(6):654-658 Nov, 2023
- Subject
- Fields, Waves and Electromagnetics
Oscillators
Heterojunction bipolar transistors
Indium phosphide
III-V semiconductor materials
Power generation
Frequency measurement
Power measurement
Harmonic analysis
Bipolar transistors
Harmonic generation
heterojunction bipolar transistors (HBTs)
oscillators
- Language
- ISSN
- 2156-342X
2156-3446
A 700 GHz integrated signal source has been developed in this work based on a 130 nm InP heterojunction bipolar transistor technology. The circuit consists of a differential 350 GHz oscillator integrated with a frequency doubler. For the oscillator, the common-base cross-coupled topology was employed, while balanced common-emitter structure was adopted for the frequency doubler. The fabricated signal source exhibited a measured output frequency around 700 GHz, with a tight frequency variation over oscillator bias current change (702.3–698.8 GHz). The circuit also showed a measured peak output power of −11.8 dBm and dc-to-RF efficiency at peak output power of 0.09%. The phase noise was measured to be −73.8 dBc/Hz at 10 MHz offset frequency. The total dc power dissipation was 74.4 mW.