The Development of 1.7kV 100A SiC MOSFET Power Module for Automotive Application
- Resource Type
- Conference
- Authors
- Chiu, Po-Kai; Lin, Hsin-Han; Huan, Yuan-Cheng; Syu, Ji-Yuan; Liu, Yan-Cheng; Fan, Yan-Bo; Cheng, Yu-Hua; Chang, Chien-Wei; Hsieh, Yung-Min; Kao, Kuo-Shu; Tsai, Chu-Han
- Source
- 2023 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia) Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2023 IEEE Workshop on. :1-4 Aug, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Power, Energy and Industry Applications
Vibrations
MOSFET
Inductance
Silicon carbide
Thermal resistance
Automotive applications
Asia
SiC
power module
simulation analysis
packaging
reliability
- Language
- ISSN
- 2831-3712
The high performance SiC MOSFET is one of the most popular devices which has been applied in the EV industry. Besides, the SiC power module is high current density and low thermal resistance is attractive for charging systems. The 1700V100ASiC MOSFET half bridge power module developed by ITRI is shown to satisfy the high voltage application. It’s observed from the simulation analysis that the module has 100A rated current, low inductance