Ambient Dependent Degradation Behavior of Flexible Poly-Si TFTs Under Dynamic Stretch Stress
- Resource Type
- Conference
- Authors
- Hu, Yang; Zhou, Wenjuan; Wang, Mingxiang; Zhang, Dongli; Wang, Huaisheng; Shan, Qi
- Source
- 2023 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Physical and Failure Analysis of Integrated Circuits (IPFA), 2023 IEEE International Symposium on the. :1-3 Jul, 2023
- Subject
- Components, Circuits, Devices and Systems
Computing and Processing
Photonics and Electrooptics
Signal Processing and Analysis
Degradation
Water
Analytical models
Correlation
Failure analysis
Thin film transistors
Behavioral sciences
degradation
LTPS TFTs
dynamic stretch stress
flexible
ambient
- Language
- ISSN
- 1946-1550
Degradation behavior of flexible low-temperature polysilicon thin-film transistors (LTPS TFTs) under dynamic stretch stress is studied in controlled ambient. In this work, the correlation between dynamic stretch degradation and ambient is observed for the first time. The degradation behavior in inert gas Ar is not consistent with that observed in air, and H 2 O in ambient is the key factor causing to the degradation of TFTs. The study of ambient dependent degradation behavior under dynamic stretch is of great significance for TFTs reliability evaluation.