This article analyzes the direct current and small-signal parameters of MgZnO/CdZnO (MCO) HEMT for microwave application. Further, the effect of the gate length on microwave performance parameters such as transconductance $(g_{\mathrm{m}})$, cut-off frequency $(f_{\mathrm{T}})$, maximum oscillation frequency (f MAX ) of MCO HEMT has been analyzed. The two-dimensional electron gas (2DEG) value for MCO HEMT is 7.2 × 10 13 cm −2 , g m is 103 mS/mm. The $f_{\mathrm{T}}$ and f MAX of MCO HEMT are 7.2 GHz, and 13.2 GHz, respectively. The $f_{\mathrm{T}}$ and f MAX increases with decrease in the gate length. Maximum $f_{\mathrm{T}}$ and f MAX of MCO HEMT are 13.87 GHz, and 21.5 GHz, respectively for a gate length of 500 nm. This work is significant for the development of cost-effective HEMT for microwave application.