Coexistence of Interfacial and Filamentary Resistance Switching in Ti/SiOx/Au Resistive Memory Devices
- Resource Type
- Periodical
- Authors
- Roy, S.; Chakrabarti, B.; Bhattacharya, E.
- Source
- IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 70(10):5421-5427 Oct, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Switches
Standards
Resistance
Electrodes
Silicon
Performance evaluation
Temperature measurement
Analog memory
in-memory computing
resistive memory
synapse
- Language
- ISSN
- 0018-9383
1557-9646
Metal-oxide-based resistive random access memory (RRAM) synaptic devices typically suffer from high variability and strongly nonlinear conductance change. In this work, we demonstrate a SiOx-based synapse with low operating voltages, excellent uniformity in the switching operation, and analog tunability of conductance. The devices also exhibit linear and symmetric conductance update. We demonstrate that the enhanced uniformity and analog tunability can be attributed to an interfacial switching mechanism which can be controlled through careful optimization of the device operating conditions.