Significant effect of carrier concentration on spin lifetime at low temperatures in strained Si0.1Ge0.9
- Resource Type
- Conference
- Authors
- Kawashima, K.; Naito, T.; Yamada, M.; Okada, T.; Wagatsuma, Y.; Sawano, K.; Hamaya, K.
- Source
- 2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers) Magnetic Conference - Short Papers (INTERMAG Short Papers), 2023 IEEE International. :1-2 May, 2023
- Subject
- Fields, Waves and Electromagnetics
Temperature measurement
Temperature distribution
Temperature dependence
Scattering
Length measurement
spin lifetime
strain
silicon germanium
spintronics
- Language
Using lateral spin transport measurements, we experimentally estimate the spin diffusion length (λ) and spin lifetime (τ) in strained n-Si 0.1 Ge 0.9 with two-different carrier concentrations (n) of ~1×10 18 cm -3 and ~5×10 18 cm -3 in the temperature range from 8 K to room temperature. We find a marked difference in τ depending on n at temperatures less than 100 K. We propose that, in the degenerate regime, the intravalley spin-flip scattering mechanism should be considered in the strained n-Si 0.1 Ge 0.9 .