Bipolar Transistors’ Holding Phenomena
- Resource Type
- Conference
- Authors
- Huang, Shao-Chang; Hsu, Kai-Chieh; Lin, Chih-Hsuan; Wang, Chien-Wei; Li, Ching-Ho; Liao, Chih-Cherng; Chuang, Jung-Tsun; Lin, Gong-Kai; Chen, Lin-Fan; Chen, Chun-Chih; Jou, Yeh-Ning; Lee, Jian-Hsing; Chen, Ke-Horng
- Source
- 2023 International Conference on Consumer Electronics - Taiwan (ICCE-Taiwan) Consumer Electronics - Taiwan (ICCE-Taiwan), 2023 International Conference on. :221-222 Jul, 2023
- Subject
- Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Fields, Waves and Electromagnetics
General Topics for Engineers
Geoscience
Nuclear Engineering
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Transportation
Integrated circuits
Electrostatic discharge protection
Bipolar transistors
Thyristors
Feedback circuits
Voltage
Silicon
- Language
- ISSN
- 2575-8284
Silicon Controlled Rectifier (SCR) is often applied for Electrostatic Discharge (ESD) protections. SCR holding voltage is requested to be larger than the integrated circuit (IC) operation voltage because SCR owns the latch-up phenomena. Bipolar transistors are more frequently than SCR to be used as ESD protections. Large holding voltages are also often requested for bipolar transistors. SCR owns the positive feedback circuit characteristics so it owns latch-up properties. However, bipolar transistors don’t have the positive feedback circuit so the latch-up event should not occur. The latch-up characteristics in SCR and not in bipolar transistors are discovered well in this study through the silicon verifications.