A DC~67 GHz Memristive RF Switch Based on Conductive-Bridging RAM on High-Resistivity Silicon Substrate
- Resource Type
- Conference
- Authors
- Xu, Zong-Rui; Ye, Yi-Feng; Wu, Lin-Sheng; Mao, Jun-Fa
- Source
- 2023 IEEE MTT-S International Wireless Symposium (IWS) Wireless Symposium (IWS), 2023 IEEE MTT-S International. :1-3 May, 2023
- Subject
- Fields, Waves and Electromagnetics
Signal Processing and Analysis
Radio frequency
Temperature measurement
Random access memory
Switches
Insertion loss
Silicon
Frequency measurement
Conductive bridging random access memory (CBRAM)
heterogeneous integration
reliability analysis
memristive RF switch
- Language
A RF switch based on the conductive bridge random access memory (CBRAM) technique is proposed and fabricated on a high-resistivity silicon (HRS) substrate. The CBRAM-based switch can maintain its ON/OFF state without a continuous biasing, leading to ultralow power consumption potentially. Experimental and equivalent circuit results show the switch provides a relatively low ON-state insertion loss of less than 1.2 dB up to 67 GHz. The OFF-state isolation is over 10 dB. The retention and switching characteristics of the proposed memristive switch are tested. It is demonstrated that the baking process at 125°C has small impact on the ON/OFF-state resistances and the device can still be switched under the high temperature of 85°C.