Silicon carbide (SiC) MOSFET has become an excellent alternative to Si IGBT and Si MOSFET due to its high frequency, high temperature and high voltage resistance. However, the fast-switching characteristics of SiC MOSFET also bring serious electromagnetic interference problems. In order to understand these characteristics and influence mechanisms of SiC MOSFET, this paper proposed an equivalent circuit analysis model. Considering the parasitic parameters and nonlinear capacitance parameters, a 1.7kV SiC MOSFET power model is established. The static characteristics of the model are verified by comparing the simulation results with the static characteristic curves in the SiC MOSFET datasheet. Based on the double pulse test platform, the simulation results are compared with the experimental results to verify the dynamic characteristics of the model.