700 V/2.5 A Normally-off Ultrathin-barrier AlGaN(
- Resource Type
- Conference
- Authors
- Luan, Tiantian; Huang, Sen; Yao, Yixu; Jiang, Qimeng; Wang, Yuhao; Huang, Yifei; Feng, Chao; Wang, Xinhua; Liu, Xinyu; Wang, Ronghua; Ren, Yongshuo; Cheng, Wanxi; Liang, Huinan
- Source
- 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :103-106 May, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Fabrication
Integrated circuits
Semiconductor device measurement
Logic gates
HEMTs
Dielectric measurement
Wide band gap semiconductors
AlGaN/GaN heterostructure
ultrathin-barrier
enhancement-mode
gate overdrive window
PBTI
- Language
- ISSN
- 1946-0201
700 V/2.5 A enhancement-mode (E-mode) ultrathin-barrier (UTB)-AlGaN ($V_{\text{TH}}$) of 0.1 V with good uniformity, a maximum drain current of 2.5 A, and a breakdown voltage over 700 V. The device also features a decent gate overdrive window and positive bias temperature instability (PBTI). The UTB-AlGaN/GaN-on-Si technology platform is highly preferred for an AlGaN-recess-free fabrication and integration of GaN-based power devices and ICs.