Investigations of Residual Damage in SiC Trench MOSFETs after Single and Multiple Short-Circuit Stress
- Resource Type
- Conference
- Authors
- Takahashi, Mitsuki; Yano, Hiroshi; Iwamuro, Noriyuki; Harada, Shinsuke
- Source
- 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2023 35th International Symposium on. :250-253 May, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Power, Energy and Industry Applications
Degradation
Integrated circuits
MOSFET
Electron traps
Silicon carbide
Power semiconductor devices
Leakage currents
SiC MOSFETs
SiC trench MOSFETs
short-circuit
residual damage
- Language
- ISSN
- 1946-0201
This study investigated the residual damage to 1.2 kV SiC trench MOSFETs after being subjected to single or multiple short-circuit stress tests. The SiC trench MOSFETs showed higher gate leakage current ($I_{\mathrm{G}}$) than $S$ iC planar MOSFETs with short-circuit transient. However, the SiC planar MOSFETs showed a large positive shift of the $I_{\mathrm{D}}-V_{\text{GS}}$ curve after single short-circuit stress tests despite lower $I_{\mathrm{G}}$, while the $S$ iC trench MOSFETs with higher $I_{\mathrm{G}}$ did not show such degradation. This could be caused by electrons trapped in the higher density oxide traps in the SiC planar MOSFETs during the single short-circuit stress tests regardless of the size of $I_{\mathrm{G}}$. It was also found that multiple short-circuit stress tests to the $S$ iC trench MOSFETs did not affect $I_{\mathrm{D}}-V_{\text{GS}}$ stability. These results indicate that SiC trench MOSFETs have superior stability against short-circuit stress compared to SiC planar MOSFETs.