Ultra High-k HfZrO4 Thin Films Grown by Atomic Layer Deposition using Metal-Organic and Brute HOOH precursors
- Resource Type
- Conference
- Authors
- Kashyap, Harshil; Benham, Marshall; Spiegelman, Jeffrey; Kummel, Andrew
- Source
- 2023 International VLSI Symposium on Technology, Systems and Applications (VLSI-TSA/VLSI-DAT) Technology, Systems and Applications (VLSI-TSA/VLSI-DAT), 2023 International VLSI Symposium on. :1-2 Apr, 2023
- Subject
- Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Power, Energy and Industry Applications
Signal Processing and Analysis
Water
MIM devices
Electrodes
Photonic band gap
Films
Random access memory
Very large scale integration
- Language
Lower leakage at low EOT is a requirement for DRAM application. High-k materials such as TiO 2 have shown low EOT (3.5A-4A) but suffer from small band gap and high leakage 1 . Ferroelectric/antiferroelectric HfZrO 4 films have shown high-k at 10nm but as the films are scaled, the dielectric properties of the films decrease 2, 3 . The key to low EOT is to find a material with high-k at 5 nm or sub-5nm thickness with low leakage. In the present study, HfZrO 4 films were fabricated with HOOH and metal organic precursors which demonstrate very high-k (∼88) at 5 nm thickness with TiN and W electrodes in metal-insulator-metal (MIM) device structure.