Automated CMP multi-slurry ratio tuning for Defect Reduction : APC : Advanced Process Control
- Resource Type
- Conference
- Authors
- McCabe, Russell; Arab, Abbas; Jeppson, Mike; Ward, Kevin; Berry, David; Mukherjee, Subhadeep; Yang, Yi
- Source
- 2023 34th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) SEMI Advanced Semiconductor Manufacturing Conference (ASMC), 2023 34th Annual. :1-4 May, 2023
- Subject
- Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Process control
Fluid flow
Semiconductor device manufacture
Surface roughness
Rough surfaces
Slurries
Tuning
- Language
- ISSN
- 2376-6697
Elevated polishing time was discovered to correlate to high defectivity and yield loss on a Floating Gate Poly CMP process. This process has a high rate slurry for bulk removal and a low rate slurry for final polish and surface roughness reduction. The polish time for the bulk slurry is the primary process control method. An automated process control was developed to maintain the bulk slurry polish time in a range that minimizes defectivity, while ensuring the critical Poly thickness remains on target.