掺质极宽禁带半导体β-Ga2O3单晶光电性质调控研究进展 / Regulation of Growth and Photoelectric Properties of Doped β-Ga2 O3 Single Crystal
- Resource Type
- Academic Journal
- Source
- 中国照明电器 / China Light & Lighting. (8):1-11
- Subject
宽禁带半导体 β-Ga2O3 晶体 掺质 光学性质 电学性质 - Language
- Chinese
- ISSN
- 1002-6150