Optimal impurity distribution model and experimental verification of variation of lateral doping termination
- Resource Type
- Academic Journal
- Authors
- Min Ren; Chang-Yu Ye; Jian-Yu Zhou; Xin Zhang; Fang Zheng; Rong-Yao Ma; Ze-Hong Li; Bo Zhang
- Source
- 中国物理B(英文版) / Chinese Physics B. 32(4):817-822
- Subject
- variation of lateral doping(VLD)
junction termination
breakdown voltage
reliability
- Language
- Chinese
- ISSN
- 1674-1056
Based on the charge balance principle,an optimal impurity distribution variation of lateral doping termination(OID-VLD)and its ion-injection mask design method are proposed and verified.The comparative simulations and experiments show that OID-VLD can achieve better blocking ability and reliability than the traditional VLD(T-VLD).Vertical double diffusion MOSFET(VDMOS)with OID-VLD achieved breakdown voltage(BV)of 1684 V and passed the 168 hours 100℃-110℃-120℃-125℃high-temperature reverse bias(HTRB)test,while VDMOS with T-VLD obtained BV of 1636 V and failed in the 20 hours 120℃HTRB test.