Demonstration of GaN/InGaN Light Emitting Diodes on (100) β-Ga 2 O 3 Substrates by Metalorganic Chemical Vapour Deposition
- Resource Type
- Authors
- Zhao Hong; Jiang Ruo-Lian; Liu Bin; Xiu Xiang-Qian; Xia Changtai; Shi Yi; Han Ping; Zhang Rong; Zheng Youdou; Xie Zi-Li
- Source
- Chinese Physics Letters. 25:2185-2186
- Subject
- Materials science
Fabrication
business.industry
General Physics and Astronomy
Chemical vapor deposition
Substrate (electronics)
law.invention
law
Optoelectronics
Metalorganic vapour phase epitaxy
Spectroscopy
business
Single crystal
Layer (electronics)
Light-emitting diode
- Language
- ISSN
- 1741-3540
0256-307X
The growth and fabrication of GaN/InGaN multiple quantum well (MQW) light emitting diodes ( LEDs) on ( 100) beta-Ga2O3 single crystal substrates by metal-organic chemical vapour deposition (MOCVD) technique are reported. x-ray diffraction (XRD) theta-2 theta. scan spectroscopy is carried out on the GaN buffer layer grown on a ( 100) beta-Ga2O3 substrate. The spectrum presents several sharp peaks corresponding to the ( 100) beta-Ga2O3 and ( 004) GaN. High-quality ( 0002) GaN material is obtained. The emission characteristics of the GaN/InGaN MQW LED are measurement. The first green LED on beta-Ga2O3 with vertical current injection is demonstrated.