Room-temperature ferroelectric switching
- Resource Type
- Authors
- Ruixiang Fei; Li Yang
- Source
- Nature Electronics. 4:703-704
- Subject
- Materials science
Silicon
business.industry
chemistry.chemical_element
Substrate (electronics)
Ferroelectricity
Electronic, Optical and Magnetic Materials
chemistry.chemical_compound
Semiconductor
chemistry
Optoelectronics
Electrical and Electronic Engineering
business
Instrumentation
Germanium telluride
- Language
- ISSN
- 2520-1131
Ferroelectric switching of spin-to-charge conversion can be achieved at room temperature in germanium telluride — a Rashba ferroelectric semiconductor — deposited on a silicon substrate.