Study of Microwave Performances of AlInN/GaN and AlGaN/GaN HEMT Devices up to 18GHz
- Resource Type
- Authors
- Callet, Guillaume; Jardel, Olivier; Sarrazin, Nadège; Morvan, E.; Diforte-Poisson, M.A.; Oualli, M.; Chartier, E.; Reveyrand, Tibault; Teyssier, Jean-Pierre; Piotrowicz, S.; Quéré, Raymond; Delage, S.L.
- Source
- 18th European Workshop on Heterostructure Technology (HETECH 2009)
18th European Workshop on Heterostructure Technology (HETECH 2009), Nov 2009, Ulm, Germany
- Subject
- [SPI.TRON]Engineering Sciences [physics]/Electronics
- Language
- English
International audience; An intensive electrical characterization of AlInN/GaN HEMT devices is presented in this paper. The performances of these devices based on new material are compared with AlGaN/GaN HEMT devices, thanks to the measurement results and the extraction of small-signal models. Our study is based on 8x75μm devices processed by 3-5 Lab. Load-pull characterizations at 18 GHz will show the advantages of this technology at high frequencies.