C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation
- Resource Type
- Article
- Authors
- Zhu, Xiaohua ; Bi, Te ; Yuan, Xiaolu ; Chang, Yuhao ; Zhang, Runming ; Fu, Yu ; Tu, Juping ; Huang, Yabo ; Liu, Jinlong ; Li, Chengming ; Kawarada, Hiroshi
- Source
- In Applied Surface Science 15 August 2022 593
- Subject
- Language
- ISSN
- 0169-4332
Highlights •A high channel hole mobility of 200 cm2V−1s−1 was achieved in C-Si interface (111) diamond MOSFETs.•The C-Si interface provides the MOSFETs with an excellent normally-off operation.•The advantage of boron doping in (111) diamond provides a large maximum current density.•The anatomically flat and strain-free interface between the (111) diamond and SiO2 film was confirmed by HRTEM.•The existence of C-Si bonds at the interface was proved by EELS and XPS.